The collapse strong field expels particle out by ponderomotive force and density cavitons form.
强激光与等离子体相互作用时在临界面附近发生强烈的波-波、波-粒相互作用,原来均匀分布的横等离子体波在调制不稳定作用下,发生坍塌破碎,局域化的高强度横等离激元通过有质动力排斥粒子形成密度空穴,同时诱发出高强度的低频磁场。
In this paper,static state and quasi-static state models of quantum well channel hole-sheet-density of SiGe p-metal-oxide-semiconductor with δ -doping-layer are established and analyzed.
建立了含有δ掺杂层的SiGepMOS器件量子阱沟道中空穴面密度的静态与准静态物理模型 ,并对该模型进行了数值分析 。