Application of Factor Analysis to AES Studiesof Uranium Oxidation by CO and O_2;
因子分析技术在铀与CO,O_2反应俄歇分析中的运用
In order to measure the local density of states on each depth profile of the GaAs/Si interface by AES, the Auger lineshape is carefully processed and the Auger lineshape analysis is performed with the help of factor analysis.
采集GaAs／Si界面的各个深度剖面的俄歇线形（Augerlineshape），试图获得局域态密度变化的信息。
The Auger parameter can be measured more accurately.
从ＣｅＭ５Ｎ４５Ｎ４５的俄歇峰可获得中心离子Ｃｅ的电子云密度等信息，发现其俄歇参数与配位体的极化变形程度有关，从而解释了双烯烃定向聚合必须有稀土卤氧键存在的原因。
The suboxides SiO_x on the SiO_2/Si interface were studied by the Auger parameter method.
本文报道了俄歇参数法用于SiO_2/Si界面层硅过渡态的研究。