Considering the effect of atomic radius,electronegativity and out shell electronic number of solute and solvent elements on the solubility of solute, solubility ( C ) equation of binary alloys was derived: C = A 1(ΔR)+A 2(ΔN) 2+A 3(ΔE 1/3 )+A 4.
综合考虑了溶质元素与基体元素的原子半径、电负性以及外层电子数的立方根对溶质元素固溶度的影响，推导出二元合金的固溶度定量方程，提出了多元高温合金固溶极限曲线的预测新方法，并将其应用于计算镍基和钴基三元合金相图的γ／（γ＋σ）相界和γ（γ＋μ）相界。
photoelectron spectroscopy of outer shell electron
外层电子光电子能谱学
PESOS (Photoelectron Spectroscopy of Outer-Shell)
外层电子光电光谱法
The outermost electron is shielded from the nucleus.
原子核对最外层电子的作用受到屏蔽。
An ion is an atom that, through electron transference, has lost or gained electrons in its outer shell.
离子就是经过电子转移而失去或获得外层电子的原子。
A simple and useful characterization of the outer electrons in an atom is the idea of valence.
对原子外层电子的简单而有用的描述是原子价的概念。
The vacant place is taken by one of the outer electrons which thus leaps from an outer to an inner "shell".
真空穴由一个从外“壳”跃至内“壳”的外层电子来填充。
The outer electrons of the atoms in a metal wire are continually moving from one atom to another and back again.
在金属电线中，原子的外层电子总是来回不断地从一个原子移向另一个原子。
For the moment, we shall only be interested in the levels that arise from excitations of the outer electrons.
就目前而言，我们将只对由外层电子的激发所形成的能级感兴趣。
The outer ring contains the valence electrons.
排在外层的有价电子。
Except for the transitional elements, valency electrons are in the outermost electron shell.
除去过渡元素外，价电子位于最外面的电子层。
Some layers between the third and last layers of an atom contain as many as 32 electrons.
原子内第三层和最外层之间的一些电子层，含有多达32个电子。
Research on the Preparation of Bi_2Te_3 Nanometer Thin Films by Electrochemical Atomic Layer Epitaxy;
电化学原子层外延制备Bi_2Te_3纳米热电薄膜的研究
Electrons closer to the nucleus are held more tightly than those in the outer orbits.
靠近原子核的电子比外层轨道上的电子结合得紧。
photoelectron spectroscopy of inner shell electron
内层电子光电子能谱学
Silicon epitaxial layers--Determination of carrier concentration--Mercury probe Voltage-capacitance method
GB/T14146-1993硅外延层载流子浓度测定汞探针电容-电压法
Gallium arsenide epitaxial layer-Determination of carrier concentration-Voltage-capacitance method
GB/T11068-1989砷化镓外延层载流子浓度电容-电压测量方法
Growth of VA-VIA Group Compound Semiconductor Thermoelectric Nanofilms Via the Route of Electrochemical Atomic Layer Epitaxy;
VA－VIA族化合物半导体纳米热电薄膜的电化学原子层外延生长
Research on the Preparation of Nanometer Thin Film of Thermoelectric Material by ECALE;
电化学原子层外延制备纳米薄膜热电材料的研究