Photoluminescence mechanisms,p-type doping,p-n junction and diluted magnetic property of ZnO-based semiconductor thin film are discussed in detail.
详细探讨了ZnO薄膜材料的发光机理、P型掺杂、p-n结的生长和稀磁性能,并对国内外的发展情况和存在问题进行了分析和探讨。
ZnO thin films have many excellent properties such as photoelectricity, p-n junctionetc.
ZnO薄膜是一种具有优良性质的材料,如光电、p-n结特性等,并有多种制备方法,其性质取决于不同的掺杂组分。
In this arti- cle the basic structures of photoconductive,schottky barrier,p-n junction and other types of ZnO ultraviolet photodetec- tors are introduced briefly.
简要介绍了ZnO基紫外光探测器采用的基本结构:包括光电导型、肖特基势垒型以及p-n结型;比较了不同结构的ZnO紫外光探测器所具有的优缺点,对光电导型、肖特基势垒型以及p-n结型紫外光探测器近几年的发展分别进行了详细评述。
The Characteristic Research of p-type N-In Codoped ZnO Film and p-n Homojunction
N-In共掺p型ZnO薄膜及p-n结的特性研究
Research on the Preparation and Properties of p-type ZnO Films and ZnO Based p-n Junctions;
P型ZnO薄膜及其p-n结的制备与性能的研究
Study on the Preparation of p-n Junction NiO/TiO_2 Photocatalystand its Activity by Ball Milling;
球磨法制备p-n结型光催化剂NiO/TiO_2
A new p-n structure ultraviolet photodetector with p~--GaN active region
以弱p型为有源区的新型p-n结构GaN紫外探测器
light emitted at a p-n junction is proportional to the bias current; color depends on the material used.
对偏流在p-n结上有比例地发光；外貌决定于材料。
Verification of the Current-voltage Characteristics of p-n Junction in Polymer Light-Emitting Electrochemical Cells;
验证聚合物发光电化学池中p-n结的电流电压特性
p-n-p diffused-junction transistor
p-n-p 扩散结晶体管
N-P-N-P three junction device
npnp三结器件n-p-n-p三结器件
p-n-p-n transistor
p-n-p-n 晶体管
N-P-N two junction transistor
NPN双结晶体管n-p-n双结晶体管
Fabrication of n-ZnO/i-ZnO/p-GaN Heterostructure LEDs by PLD;
PLD方法制备n-ZnO/i-ZnO/p-GaN异质结LED
The Studies on the Properties of the ZnO Based p/n Heterojunction Devices;
ZnO基p/n异质结器件的物性研究
The Theoretical Analysis and Testing of HgCdTe Loophole P-N Junction;
碲镉汞环孔P-N结理论分析与测试
Study of SHG on PbO-B_2O_3 Glasses and P-N Junction Amorphous Silicon Thin Films;
铅硼玻璃及P-N结无定形硅薄膜的SHG研究
Syntheses and Crystal Structures of Cu/Ag Compounds with N-/P-Containing Ligands;
含N/P配体的铜/银化合物的合成及结构研究
The Semantic Feature,Syntax Structure,Pragmatic Value of "Time+N(P)";
“时量+N(P)”的语义特征、句法结构、语用价值
Study on Choosing Sensitive Material Principle of n+p Combined Structure Semiconductor Gas Sensor;
n+p组合结构气体传感器选材原则研究
Simulation of Silicon Solar Cells Based on P-N Junction
基于P-N结的硅太阳能电池的数值分析