Ultraviolet Photodetectors Based on GaN with p-i-n structure;
GaN基p-i-n结构紫外光探测器
Some technique methods were introduced, such as increasing the crystalline silicon grain size to enhance minority carrier mobility, using surface passivation to reduce numbers of minority carrier recombination centers, designing p-i-n structure to elevate light collection, fabri.
以提高多晶Si薄膜太阳电池转换效率为主线,介绍了增大晶粒尺寸以增加载流子迁移率、进行表面和体内钝化以减少复合中心、设计p-i-n结构以增加光收集效率、制作绒面结构以提高对入射光的吸收效果、改进电池结构以谋求最大效率等工艺措施;综述了近5年来多晶Si薄膜电池在材料生长、结构制备和性能参数方面取得的最新进展,并对其发展前景做了预测。
A Solar-Blind AlGaN-Based p-i-n Back-Illuminated Photodetector with a High Temperature AlN Template Layer;
高温AlN为模板的AlGaN基p-i-n背照式日光盲探测器(英文)
Fabrication and characterization of back-illuminated GaN/AlGaN p-i-n UV detectors with high performance;
高性能背照式GaN/AlGaN p-i-n紫外探测器的制备与性能
Effect of Electron Irradiation on the AlGaN/GaN P-I-N UV Detector;
AlGaN/GaN P-I-N紫外探测器的电子辐照效应
a-SiC_x film with B-doped p-i junction structure was deposited by plasma enhanced chemical vapor deposition(PECVD) on ITO transparent conductive glass with the film as an anode,then an Al film,as a cathode,was sputtered,which consisted of a sandwich structure,and its I-V and light emitting characteristics were studied.
在以ITO薄膜为正极的透明导电玻璃上,利用PECVD方法进行B掺杂制备出具有p-i结的a-SiCx:H薄膜,然后在其上溅Al作为负电极形成“三明治”器件结构,并对它的I-V特性和发光特性进行了研究。