Plasma pattern etching of cubicβ- Si C single crystalline thin films via atmospheric pressure chemical vapor deposition has been studied systematically in CF4+ O2 mixtures.
采用等离子体刻蚀工艺 ,以四氟化碳 ( CF4 )和氧气 ( O2 )的混合气体作为刻蚀气体 ,对常压化学气相淀积工艺制备的β- Si C单晶薄膜进行了系统的图形刻蚀研究。