It is the first time in the world that graded tensile strained bulk-like active structure is induced to fabricate semiconductor optical amplifier.
采用渐变应变有源区结构 ,制备出偏振不灵敏半导体光学放大器 ,工作电流在 6 0～ 16 0mA范围内 ,其 3dB带宽范围不小于 35nm ,偏振不灵敏度小于 0 35dB ,自发发射出光功率为 0 18～ 3 9mW 。
Graded strained bulk like structure as semiconductor optical amplifier active region is proposed for the first time.
提出一种新型的半导体光学放大器结构 ,并从增益谱和能带结构等角度分析其特征 ,得出其大带宽内偏振不灵敏的原因和规律 。