3UCVD deposition SiO_2 on SiC wafer and its C-V measurement;
碳化硅基上3UCVD淀积二氧化硅及其C-V性能测试
We study in this paper various deposition parameters affecting thin film properties.
等离子增强型化学气相淀积（ＰＥＣＶＤ）氮化硅是目前器件唯一能在合金化之后低温生长的氮化硅。
The mechanism of deposition polysilicon thin film in LPCVD system is described.
叙述了采用LPCVD系统淀积多晶硅薄膜的机理 ,分析了在淀积多晶硅薄膜过程中引起发雾的因素 ,指出了保持LPCVD系统的洁净能有效消除在淀积多晶硅薄膜过程中出现的发雾现象。
The diffusion was researched through analyzing characteristics of the pre-deposition process and the drive-in process.
结合预淀积和再分布两种条件下扩散的特点,采用两步法工艺制备了高浓度硼深扩散硅片,研究了影响杂质浓度和扩散深度的再分布与预淀积时间比。
Two important parameters in the process of laser induced plasma chemical vapor deposition film size and deposition rate are deduced with shock wave theory The influence of laser intensity,atmosphere and pedestal temperature on the deposition process is analyse
用激波理论推出了激光诱导等离子体化学气相淀积过程中两个重要参量薄膜面积、膜淀积速率的表达式。
A time\|dependent model for deposition rate is presented which includes two parameters of the process: the ion beam s dwell time and its loop time.
Meyer离子与表面吸附气体相互作用模型的基础上 ,提出了聚焦离子束辅助淀积的淀积速率模型 。