During the deposition,the films were in situ investigated by RHEED instrument at 650 ℃ in vacuum.
在薄膜的沉积过程中,用安装在激光脉冲沉积设备上的反射高能电子衍射仪(RHEED)对薄膜的生长进行了原位监测。
The use of reflection high-energy electron diffraction(RHEED) has been proven to be a powerful tool to understand growth mechanisms of GaSb by molecular beam epitaxy(MBE).
采用分子束外延技术,在GaAs衬底上生长GaSb薄膜时,利用反射式高能电子衍射仪(RHEED)对衬底表面清洁状况、外延层厚度等进行在线监控。