In order to satisfy the development of bulk silicon MEMS manufacturing process,the process parameters of ICP-RIE,especially the effect of platen power on the silicon dry etching,were intensively analyzed.
为满足体硅MEMS制造工艺进一步发展的需要,对电感耦合等离子体(ICP)刻蚀工艺参数进行了深入分析,着重分析了平板功率对Si干法刻蚀的影响。