The I-V characteristics for SiC buried-channel MOSFETs based on an average mobility model is presented.
提出了一种SiC隐埋沟道MOSFET平均迁移率模型,并在此基础上对器件I-V特性进行了研究。
The effects of several factors on mobility in 4H-SiC buried-channel (BC) MOSFETs are studied.
研究了几种因素对4H-SiC隐埋沟道MOSFET沟道迁移率的影响。