SiGe HBT Class AB Power Amplifier for Wireless Communications;
用于无线通信的SiGe异质结双极型晶体管AB类功率放大器(英文)
Frequency performance is the first key factor in the design of heterojunction bipolar transistor(HBT),fTand fmax are the main frequency parameters.
频率特性是异质结双极型晶体管(HBT)设计中应首先考虑的因素,而fT,fmax则是HBT最主要的频率性能指标。
An InP-based single-heterojunction bipolar transistor(SHBT)with base μ-bridge and emitter air-bridge is reported.
报道了具有基极微空气桥和发射极空气桥结构的InP单异质结双极型晶体管(SHBT)。
We report the performance of the first self-aligned InP/InGaAs double heterojunction bipolar transistor (DHBT) produced in China.
报道了一种自对准InP/InGaAs双异质结双极晶体管的器件性能。
heterojunction bipolar transistor
异质结双极型晶体管
SiGe Heterojunction Bipolar Transistor (SiGe HBT) Research and Design;
SiGe异质结双极晶体管（SiGe HBT）研究与设计
Study on ESD of InGaP Heterojunction Bipolar Transistors
InGaP异质结双极晶体管ESD特性研究
A physical-model of small-signal InP-based double heterojunction bipolar transistors and its parameter extraction technique
一种InP双异质结双极晶体管小信号物理模型及其提取方法
Status of InP/GaAsSb/InP Double Heterojunction Bipolar Transistors Technology
InP/GaAsSb/InP双异质结双极晶体管技术发展现状(Ⅰ)
The DFM of Ultrahigh SiGe HBT;
超高频SiGe异质结双极晶体管的可制造性设计
Simulation, Design and Fabrication of GaAs-based Heterostructure Bipolar Transistor;
GaAs基异质结双极晶体管（HBT）的模拟、设计与制作
Experimental Research on Reliability of GeSi/Si Heterojunction Bipolar Transistors (HBTs);
GeSi/Si异质结双极晶体管（HBT）可靠性实验研究
The Study and Design of High Frequency Power SiGe Heterojunction Bipolar Transistors(HBTs);
高频功率SiGe异质结双极晶体管（HBTs）的研究与设计
The Study of SiGe Heterojunction Bipolar Transistors and its Integrated Circuits;
SiGe异质结双极晶体管及其集成电路的研究
The Research of Base Dopant Outdiffusion and Setback Layers in SiGe Microwave Heterojunction Bipolar Transistor(HBT);
SiGe微波异质结双极晶体管中基区杂质外扩及阻挡层的研究
Experimental Research on Reliability of Si/SiGe/Si Heterojunction Bipolar Transistors (HBTs) under Thermal and Electrical Stress;
热电应力下Si/SiGe/Si异质结双极晶体管（HBTs）可靠性实验研究
double heterojunction laser diode
双异质结激光二极管
monorail double heterojunction diode
单轨双异质结二极管
The Convergence Characteristic of the Forward I-V Characteristic Curves of Emitter-base Junction of Bipolar Junction Transistor;
双极结型晶体管发射结正向I-V特性曲线的汇聚特性
Measuring methods for insulated-gate bipolar transistor
GB/T17007-1997绝缘栅双极型晶体管测试方法
Effects of Stress on Bipolar Transistor Performance Parameters
应力对双极型晶体管参数性能的影响
A Study of the Structure and the Performance of Microwave Silicon Bipolar Transistor Using for MMIC and Its Process Development
用于MMIC硅基双极型高频微波晶体管结构、性能研究及工艺开发