Pulsed total dose effect test technique and damage laws study;
脉冲总剂量效应测试技术及其损伤规律研究
The computational model of MOS Devices on time-dependent response of pulse total dose effects on MOS Devices is set up in the paper,including short-term recovery due to hole transport,the long-term recovery due to trapped hole anneal and the long-term buildup of interface traps.
本文建立了MOS器件脉冲总剂量效应时间关联响应的计算模型,包括空穴输运引起的短期恢复、深层俘获空穴引起的长期恢复以及界面态的长期建立,详细讨论了俘获空穴空间分布的差异对退火响应的影响以及温度差异对界面态建立的影响。