Plastic deformation induced by indentation in a GaAs single crystal was investigated using electron microscopy in the present experiment.
用电子显微镜研究了压痕诱发砷化镓单晶中的塑性变形。
049N Vickers indentation in GaAs single crystal has been investigated using high-resolution electron microscopy.
０４９ Ｎ载荷 Ｖｉｃｋｅｒｓ压痕诱发砷化镓单晶的相转变进行了观察和研究，结果表明。
Boat-grown gallium arsenide single crystals and As-cut slices
GB/T11094-1989水平法砷化镓单晶及切割片
PREPARATION OF A HIGH PURITY GALLIUM ARSENIDE MONOCRYSTAL BY DOPING WITH TRACE TIN AND ITS HEAT TREATMENT
反掺锡高纯度砷化镓单晶的制备及热处理
Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices
GB/T11093-1989液封直拉法砷化镓单晶及切割片
Gallium arsenide single crystal--Determination of dislocation density
GB/T8760-1988砷化镓单晶位错密度的测量方法
The control on EPD during growing HB-GaAs-Si single crystals
水平掺硅砷化镓单晶生长过程中位错的控制
Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption method
GB/T17170-1997非掺杂半绝缘砷化镓单晶深能级EL2浓度红外吸收测试方法
Investigation About Growing the GaAs Single Crystal Containing Low Dislocations by Using Liquid Encapsulation Technique
采用液体封闭技术生长低位错砷化镓单晶的研究
Study on Si-GaAs Crystal Dislocation Cell Structure and Microdefects;
半绝缘砷化镓单晶中位错胞状结构和微缺陷的研究
gallium arsenide ultrared lighting transistor
砷化镓红外发光晶体管
gallium arsenide fet
砷化镓场效应晶体管
"Some common intrinsic semiconductors are single crystals of silicon, germanium, and gallium arsenide."
常用的本质半导体是硅、锗以及砷化镓等的单晶。
Study on the Impurity and Microdefects in Semi-Insulating Gallium Arsenide Crystals;
半绝缘砷化镓（SI-GaAs）单晶中的杂质与缺陷
galinium arsenide
ph.1. 砷化镓
Study of the Sulfur Passivation in GaAs Microwave Power Mesfet;
砷化镓微波功率场效应晶体管的硫钝化研究
Miciowave Amplifier Using GaAs FET
采用砷化镓场效应晶体管的微波放大器
Multi－gate GaAs MMIC DPDT Power Switches
多栅砷化镓单片集成双刀双掷功率开关
gallium arsenide injection laser
砷化镓注入式激光器
gallium arsenide avalanche photodiode
砷化镓雪崩光电二极管