ion beam etching system

基本解释离子束蚀刻系统

网络释义

1)ion beam etching system,离子束蚀刻系统2)reactive ion beam etching system/RIBE system,反应性离子束蚀刻系统3)DRIE systems,离子刻蚀系统4)ion beam etching,离子束刻蚀5)ion-beam etching,离子束刻蚀6)ion etching,离子束刻蚀

用法和例句

Emerging 3D interconnection technologies and high volume MEMS applications require cost effective mass production DRIE systems.

新兴的 3D 互联技术以及高产量的 MEMS 应用需要成本低廉以及高产量的深层反应离子刻蚀系统。

Influence of fabrication error in ion beam etching on diffractive optical element;

离子束刻蚀工艺误差对DOE器件的影响

Fresnel lens fabricated by ion beam etching;

离子束刻蚀法制作菲涅耳透镜

An Ion beam etching facility,model KZ-400 has been successfully designed and constructed to fabricate large-aperture(400 mm×400 mm) optical diffraction components.

日前我室为制作大口径(400 mm×400 mm)衍射光学元件需要,成功研制了一台KZ-400离子束刻蚀装置。

The influence of quadratic effect of ion-beam etching on pattern profile and the influence of ion-beam etching incidence angle on slope of pattern sidewall are studied.

介绍了离子束刻蚀的二次效应对图形轮廓以及离子束刻蚀入射角对图形侧壁陡度的影响。

Soft X-ray Ge and Ni condenser phase zone plates are fabricated by ion-beam etching technology on polyimide substrate and contact synchrotron radiation lithography with the mask.

以激光全息离子束刻蚀技术制作金的振幅型软X射线聚焦波带片,以此为掩模,利用接触式同步辐射光刻和离子束刻蚀技术在聚酰亚胺衬底上,分别制作出了镍和锗的软X射线相位型聚焦波带片。

The meanings of ion-beam etching for the fabrication of phase mask are discussed, and the progress of the research on ion-beam etching are introduced.

本文围绕光纤光栅相位掩模的特点和制作展开了理论和实验研究,主要包含了以下几方面的内容:首先介绍了研究光纤光栅相位掩模的意义和国内外光纤光栅相位掩模的研究进展,并且讨论了离子束刻蚀对于掩模制作的重要意义,介绍了离子束刻蚀的国内外研究现况。

The system is analysed and evaluated with optical software ZEMAX, theoretical formulas are then established, and a binary optical lens is manufactured by ion etching.

通过光学设计软件ZEMAX对具体实例进行分析和评估,并利用离子束刻蚀法制作了二元光学透镜系统,展示了二元光学透镜在超光谱成像仪中的应用前景。

The Mechanism Analysis of HgCdTe pn Junction Formed by Ion Beam Milling

离子束刻蚀HgCdTe成结机制分析

study on step sidewall tilt in ion beam etching of Fresnel lens

离子束刻蚀过程中台阶侧壁倾斜现象研究

APPLICATION OF ION BEAM MILLING TECHNIQUE TO JOSEPHSON DEVICE TECHNOLOGY

离子束刻蚀技术在约瑟夫逊器件工艺中的应用

Fabrication of 128×128 Area Silicon Field Emission Arrays Using Ar Ion Beam Etching

128×128元硅场发射阵列的氩离子束刻蚀制作

Study ofⅠ-Ⅴand R_D-V Characteristics of Ion Beam Milling HgCdTe Loophole pn Junction (PartⅡ)

离子束刻蚀HgCdTe环孔pn结Ⅰ—Ⅴ、R_D—V特性的研究(下)

Study ofⅠ-Ⅴand R_D-V Characteristics of Ion Beam Milling HgCdTe Loophole pn Junction

离子束刻蚀HgCdTe环孔pn结Ⅰ-Ⅴ、R_D-V特性的研究(上)

Multilayer Dielectric Gratings: In-situ Monitoring of Duty Cycle of photoresist Mask and Ion-Beam-Etched Groove Depth;

介质膜光栅:光刻胶掩模占宽比和离子束刻蚀槽深的监控

Investigation of Planar and Channel Optical Waveguides Fabricated by Ion Implantation and Ion Beam Etching;

离子注入与离子束刻蚀制备平面和条形光波导的研究

Tolerance of ion beam etching on multilayer dielectric thin film reflector for spectrum reshaping

多层介质膜光谱调制反射镜的反应离子束刻蚀误差容限

Acceptable Error of Etching Depth in Ion Beam Etching Microlens

离子束蚀刻微透镜中蚀刻深度允许误差的研究

Generic specification of ion beam etching system

GB/T15861-1995离子束蚀刻机通用技术条件

plasma sputter combined etching

等离子溅射复合刻蚀

Gas-Assisted Etching of Micro-Hole Lattice Array on Lithium Niobate with Focused Ion Beam

用聚焦离子束气体辅助刻蚀在LiNbO_3上制备亚微米圆孔点阵

NUMERICAL STUDIES ON ETCH PROFILES IN HIGH-DENSITY PLASMA;

高密度等离子体刻蚀轮廓的数值研究

Investigation of Etching SiCOH Films by Dual-Frequency Capacitively Coupled Plasma

SiCOH薄膜的双频等离子体刻蚀研究

Simulations of Plasma Etching Based on Diffusion Limited Erosion Model

基于扩散限制刻蚀模型的等离子体刻蚀模拟研究

Corrosion and Fatigue Properties of Al Alloys Treated by Ion Beams;

离子束处理铝合金的腐蚀和疲劳性能

Investigation on Characteristics of Ablation Plasma Induced by Intense Pulsed Ion Beam;

强脉冲离子束产生的烧蚀等离子体特性的研究

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