gallium nitride epitaxial materials

基本解释氮化镓外延材料

网络释义

1)gallium nitride epitaxial materials,氮化镓外延材料2)gallium arsenide epitaxy material,砷化镓外延材料3)ELO GaN,侧向外延氮化镓4)low-dimensional GaN materials,氮化镓低维材料5)gallium arsenide epitaxy,砷化镓外延6)wide-gap semi-conductor GaN Sic & AlGaN,宽禁带半导体材料氮化镓、碳化硅和铝镓氮

用法和例句

Measuring thickness of epitaxial layers of gallium arsenide by infrared interference

GB/T8758-1988砷化镓外延层厚度红外干涉测量方法

Gallium arsenide epitaxial layer-Determination of carrier concentration-Voltage-capacitance method

GB/T11068-1989砷化镓外延层载流子浓度电容-电压测量方法

Surface Defects of Heteroepitaxial Layers of GaP on GaAs Substrates and Green Emitting Electroluminescent(EL) Diodes(Abstract)

在砷化镓衬底上异质外延磷化镓的表面缺陷与绿色发光管(摘要)

gallium arsenide ultrared lighting transistor

砷化镓红外发光晶体管

galinium arsenide

ph.1. 砷化镓

GaAs Film Grown on Conducting Glass and Si by Hot Wall Epitaxy;

导电玻璃和硅上热壁外延生长砷化镓薄膜的研究

gallium arsenide injection laser

砷化镓注入式激光器

gallium arsenide fet

砷化镓场效应晶体管

gallium arsenide avalanche photodiode

砷化镓雪崩光电二极管

GaAs laser terrain profiler

砷化镓激光地形测绘仪

Studies on GaAs Surface Properties and Surface Oxidation Excited by UV Light;

砷化镓表面特性及紫外光激发下表面氧化反应研究

Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption method

GB/T17170-1997非掺杂半绝缘砷化镓单晶深能级EL2浓度红外吸收测试方法

Boat-grown gallium arsenide single crystals and As-cut slices

GB/T11094-1989水平法砷化镓单晶及切割片

GaAs PN junction injection laser

砷化镓PN结注入式激光器

GaAs double-heterostructure photodetector

砷化镓双异质结构光探测器

An Angle Sensor Using a GaAs Hall Device

利用砷化镓霍尔器件制造角度传感器

Doping Behavior of Semi-insulating GaAs by Neutron Transmutation;

半绝缘砷化镓中子嬗变掺杂行为研究

Study on the Large-signal Modeling of GaAs RF Power MESFET;

砷化镓射频功率MESFET大信号模型研究

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