Kinetics of the oxidation process of the copper films in the thickness range of 16～22 nm at 140 ℃ was studied by using transmission spectrum and sheet resistance methods.
采用方块电阻和透射光谱两种方法为表征手段,测量16～22nm范围内不同厚度Cu薄膜在140℃下完全氧化所需要的时间,得到了Cu薄膜氧化反应的动力学曲线,并利用X射线衍射(XRD)分析了氧化产物的晶相结构和成分。
The sheet resistances and reflectivity of ultra-thin aluminum and nickel films were measured when they were applied to foam with different thickness.
测量了Al,Ni薄膜的方块电阻及其用于不同厚度泡沫结构的平板反射率,实验结果表明:超薄金属膜结构可以实现谐振吸收;吸波性能由介质材料和金属薄膜共同决定。
Then,the effects of heat treatment and temperature on the chemical composition and sheet resistance of the prepared films were investigated by XRD,EDXS and sheet resistance measurements.
利用X射线衍射和能量散射X射线能谱表征方法,并结合薄膜方块电阻的测定,探讨了热处理方式和热处理温度对薄膜化学组成及薄膜电阻的影响。
By contrast to several prevention block shaping technology,on the base of discussing on influencing curve rebound factors,the paper proposed rebound value computation methods and problems for reference.
通过对几种防阻块成形工艺对照比较,特别是在对影响弯曲回弹因素进行探讨的基础上,提出弹复值计算方法及模具设计制造应注意的问题,供同行参考。
The first is definition of ITO; the second is definition of block resistance; the third is precise calculation of ITO resistance, and the fourth, analyzing the factors affecting the ITO resistance.
论述了ITO、方块电阻的定义及ITO阻值的精确计算 ,并结合实际应用讨论了影响ITO阻值的因素 ,对版图设计和LCD生产的过程控制有一定的借鉴意义。