The aim of the work was to make the comparison of the effect of cerium ion implantation with that of niobium ion implantation by using a MEVVA source at the energy of 40 keV with a dose ranging from 1×1016 ions/cm2to 1×1017 ions/cm2 at the maximum temperature of 130℃.
利用MEVVA源对Zr-4合金分别进行1×1016ions/cm2至1×1017ions/cm2剂量的铈离子与铌离子注入,比较了Ce/Nb离子注入对Zr-4合金氧化行为的影响。
An overview of the FIB direct write technique,applications in milling,implantation,and deposition is given.
概述了聚焦离子束直接写入、离子研磨、离子注入及离子沉积技术。
The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose.
室温下使用MeV能量级Si,F和O离子对 5keVB离子预注入后的n -型单晶Si( 1 0 0 )进行了辐照 ,应用二次离子质谱仪测试分析了掺杂物B原子的分布剖面及其变化 。
Influence of space charge effect on the axial injection of high intensity cyclotrons;
空间电荷效应对回旋加速器轴向注入的影响
Numerical simulation is used to optimize the injection pattern of polymer enhanced foam flooding.
以胜利油田孤岛中二中油藏为研究对象,通过物理模拟试验,证明了聚合物强化泡沫驱比单一泡沫驱或聚合物驱具有明显的提高采收率优势;应用数值模拟,优化了聚合物强化泡沫驱的注入方式;现场单井试验结果表明,强化泡沫体系在三次采油领域具有较好的应用前景。
Based on the classical molecular dynamics method and TLHT potential model,the injection processes of He atom into SWCNT with wall defects of different radius are studied.
采用经典分子动力学方法和TLHT势模型,研究了He注入不同管壁缺陷的单壁纳米碳管(SWNCT)的动力学过程,发现对应不同入射能量,He有4种典型的运动模式。
The SiO_2-Si Interfacial Structure Modification Introduced by Fe￣+ and H￣+ Ions Implantation;
Fe~＋和H~＋注入引起的Si／SiO_2界面重构现象
Molecular dynamic simulations, utilizing the Tersoff many-body potential, are u sed to investigate the microscopic processes of a single boron atom with an ener gy of 500 eV implanted into the diamond (001) 2×1 reconstructed surface.
利用Tersoff势和分子动力学方法研究了初始动能为 5 0 0eV的硼粒子注入金刚石的微观行为 。