Based on the reflective and refractive phenomena of translucent objects, this paper proposes an algorithm to recover the material properties of the objects under complex environment illumination, where refractive index and the BRTDF model both are considered in the rendering process.
针对半透明材质的特性,将折射率和BRTDF模型同时引入绘制过程,给出一套有效的求解复杂环境光照下半透明物体参数的算法。
This paper presents a new fast algorithm,based on pre-computed light transport,for rendering translucent objects under all-frequency and complex illumination represented as a high-resolution environment map.
将传统的PRT(Pre-com puted Radiance Transfer)算法应用到半透明的物体上,提出了一种在任意复杂的环境光条件下使用非线性小波绘制半透明物体的快速算法。
Preparation of Semiconductor Sulfide Pigment with Low-emissivity and the Mechanism Study;
低发射率硫化物半导体颜料的制备及机理研究
Study on the Controllable Synthesis of Sulfide Semiconductor Nano-materials and Photocatalytic Properties;
硫化物半导体纳米材料的可控合成和光催化性能研究
Preparation and Photocatalytic Study of Nanostructured Sulfide Semiconductors;
硫化物半导体纳米材料的制备及光催化性质研究
The Preparation and Characterization of Nanostructured Sulfide Semiconductors by Solvothermal Method;
硫化物纳米半导体材料的溶剂热合成及结构表征
Controled-Synthesis of Micro-Nano Sulfide ES(E=Pb, Cu, Zn, Cd);
半导体金属硫化物ES（E=Pb，Cu，Zn，Cd）纳/微米材料的可控合成
Investigation on Synthesis and Characterization of Metal Chalcogenide Semiconductor Nanocrystals
金属硫族化合物半导体纳米晶的合成及其性能的研究
semiconductor compound gases
半导体化合物用气体
Study of Surface Properties of GaP Semiconductors Passivated by Sulfur Treatment;
硫钝化GaP半导体表面性质的研究
compound semiconductor solar cell
化合物半导体太阳电池
buried channel mos
埋沟金属氧化物半导体
vertical metal oxide semiconductor
垂直金属氧化物半导体
floating gate mos
浮栅金属氧化物半导体
metal-oxide-semiconductor device
金属－氧化物－半导体器件
metal oxide semiconductor
金属 氧化物 半导体
group iii v compound semiconductor material
族化合物半导体材料
metal nitride semiconductor
金属 氮化物 半导体
combined metal oxide semiconductor
复合金属氧化物半导体
intermetallic compound semiconductor
金属间化合物半导体