The processing technologies and temperature characteristics of phosphorus-doped polysilicon emitter RCA devices and ICs are investigated.
研制的多晶硅发射区 RCA晶体管不仅具有较低的电流增益 -温度依赖关系 ,而且还具有较快的工作速度 。
The technology and structure of the polysilicon emitter is one of the important bases of modern advance silicon bipolar transistors operation for low temperatures.
对于小尺寸的多晶硅发射区双极晶体管，该文在忽略基区与单晶发射区少子复合的条件下，根据单晶与多晶硅界面复合与隧穿等不同机制的共同作用，建立了发射区注入电子电流Ｊｎ和基区注入空穴电流Ｊｐｓ的一维非线性解析模型。
The temperature system of multi-zone furnace for space crystal growth is a strong-coupled MIMO(Multi-Input-Multi-Output) plant.
多温区空间晶体生长炉温度系统是多输入多输出、强耦合对象。
Purification and stoichiometric concentration control of ZnSe polycrystalline by zone sublimation method;
ZnSe多晶料的提纯与化学比的控制
Research on preparation and structure of porous B-doped polycrystalline diamond;
多孔含硼金刚石多晶体的制备与结构研究
Growth and Characterization of Polycrystalline HgI_2 Films on Amorphous-Si Film Substrate;
非晶硅薄膜上碘化汞多晶薄膜的生长及其性能
polysilicon on oxide region
氧化物层上多晶硅区
double level polysilicon mos structure
双层多晶硅金属氧化物半导体结构
double poly process
双层多晶硅栅金属氧化物半导体工艺
poly squared cmos
双层多晶硅互补金属氧化物半导体
dioxide polysilicon isolation
二氧化硅 多晶硅隔离
We can classify thin films into four groups:thermal oxides,dielectric layers,polycrystalline silicon, and metal films.
我们可以把薄膜分成四组：热氧化物，介电质层，多晶硅，金属薄膜。
polycrystalline silicon gate mos
多晶硅栅金属氧化物半导体
Oxidation Behaviors of Poly- and Single Crystalline Transition-Metal Disilicides;
过渡族金属二硅化物单晶和多晶的氧化
Study on the SiC Whisker-Toughened Silisides and SiC/Glass Oxidation Protective Coatings;
SiC晶须增韧硅化物及SiC/玻璃高温防氧化涂层的研究
The Investigation on Si_3N_4 Coating in the Process of Mc-Si Purification by Physical Metallurgical Method
冶金法提纯多晶硅过程中氮化硅涂层的研究
Bonded Wafers- Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer.
绑定晶圆片-两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。
Silicon/Silicon oxide nanofilms and multilayer films were prepared by vacuum evaporation process followed by natural oxidation.
用真空蒸发技术和自然氧化法在玻璃衬底上制备纳米级的硅／氧化硅薄膜和多层膜。
The method is to coat a wafer of silicon with a protective layer of silicon dioxide.
其方法是往硅片上涂上一层二氧化硅防护膜。
Change on crystalline iattice and matrix region of silicon dioxide/wood composite
二氧化硅/木材复合材料的晶胞与Matrix区域的变化
The low energy consumption technology of SiCl_4 from subsidiary of polysilicon
多晶硅副产物四氯化硅的低耗能回收技术研究
Preparation of barium chloride with polysilicon by-product
利用多晶硅副产物制备氯化钡的研究
Organic-inorganic Hybrid Hollow Spheres Applied in Biologic Affinity Separation;
多孔二氧化硅空心微球的制备及其在生物亲和层析中的应用
PREPARATION OF SILICON CARBIDE WHISKER/ALUMINA COMPOSITE CERAMIC POWDER FROM KAOLINITE/POLYSTYRENE INTERCALATION COMPOUND BY CARBOTHERMAL REDUCING REACTION
高岭石/聚苯乙烯插层复合物碳热还原反应制备碳化硅晶须/氧化铝复相陶瓷粉体