Electron Screening Effects in Fusion Reactions at Low Energies;
低能聚变反应中的电子屏蔽效应
The experimental and theoretical studies of the electron screening effects in charged-particle induced reactions at energies of astrophysical interest are summarized briefly.
简要介绍了天体物理感兴趣能区带电粒子核反应中的电子屏蔽效应的实验及理论研究。
Based on Slater s model and the IEA (isoelectronic atomic) model introduced in the previous paper, equations for determining effective nuclear charges(Ze)and shielding coefficients (Sj and Sk) are denyed.
在等电子原子模型及数据的基础上，从理论上探讨和确定了元素的有效核电荷（Ｚｅ），电子屏蔽系数（Ｓｋ）及其变化规律。
Development of an electronic optometer based on SCM;
单片机电子视力计的研制
Clinical analysis on liposuction adopting electronic liposuction machine;
医用电子去脂机行抽脂术临床效果分析
Research on the development of automobile electronic information industry ——based on the theory of industry growth;
基于产业成长理论的中国汽车电子信息产业发展研究
Mixed proton-electron conductors for hydrogen permeation;
质子-电子混合导体透氢膜
Study of ion catch technology of electron microscopy in virus detection of patient s excrement;
离子扑捉电子显微镜技术检测患者粪便中病毒的方法
Teaching research on electric and electron speciality oriented art recruiting students;
面向文科招生的电气、电子专业教学研究
A comparison of ionizing radiation damage in CMOS devices from ~(60)Co Gamma rays,electrons and protons;
CMOS器件~(60)Coγ射线、电子和质子电离辐射损伤比较
In order to study avalanche ionization mechanism, it is inevitable to deal with rates of electrons absorbing and losing energy.
研究雪崩破坏机理,必然涉及到电子吸收激光能量的速率和电子损耗能量的速率,这些都与电子和声子的散射有密切的联系。
N-channel MOS transistors from CC4007,CC4011 and LC54HC04RH device were irradiated with different dose rate Co-60 gamma rays,lower energy protons(less then 9MeV)and 1MeV electrons.
利用不同剂量率γ射线、低能 (小于 9MeV)质子和 1MeV电子对CC40 0 7RH、CC40 11、LC5 4HC0 4RHNMOS FET进行了辐照实验 ,结果表明 ,在 +5V偏置条件下 ,9MeV以下质子造成的损伤总是小于60 Co,而且质子能量越低 ,损伤越小 ;对于同等的吸收剂量 ,1MeV电子和60 Co造成的损伤差别不大 ;在高剂量率γ射线辐射下 ,氧化物陷阱电荷是导致器件失效的主要原因 ,在接近空间低剂量率辐射环境下 ,LC5 4HC0 4RH电路失效的主要原因是辐射感生界面态陷阱电荷 ,而CC40 0 7RH器件则是氧化物陷阱电荷 。