GaAs detector

基本解释砷化镓探测器

网络释义

1)GaAs detector,砷化镓探测器2)gallium arseide detector,砷化镓探测器3)arsenic-free glass melting,无砷化4)Arsenide,砷化物5)Gallium arsenide,砷化镓6)Arsenic compounds,砷化合物7)GaAs,砷化镓8)hydrogen arsenide,砷化氢9)gallium arsenide (GaAs),砷化镓(GaAs)10)arsine,砷化氢

用法和例句

Traditional copper surface roughening treatment involve the use of arsenide-containing electrolyte which is harmful to environment.

对铜箔表面进行粗化处理,传统的粗化工艺中要使用砷化物,不仅操作不便而且危害环境。

The development course of low dimensional semiconductor materials and Ga-based nitride, arsenide semiconductor quantum dots are reviewed.

综述了半导体低维结构以及镓基砷化物、氮化物材料量子点的发展,涉及了外延生长机理、量子点的形貌结构特征,并着重介绍了镓基氮化物材料量子点的制备方法、研究的现状、面临的困难、应用发展现状,并对其未来研究趋势提出了看法。

In this paper, polyferric silicate sulfate (PFSS) was prepared and arsenic-containing wastewater from gallium arsenide plant was flocculated by it.

用自制的无机高分子聚合硅酸铁(PFSS),对砷化镓生产中的含砷废水进行了混凝处理。

Arsenic containing wastewater from gallium arsenide production was treated by coagulation process using self made polyferric metasilicate.

用自制的聚合硅酸铁 (PFSiC)对砷化镓生产中的含砷废水进行混凝处理。

A great deal of wastewater was produced in the manufacturing of gallium arsenide wafers,and the main contamination was gallium arsenide particles in suspension.

砷化镓晶片生产过程中 ,产生大量废水 ,其中主要污染物是悬浮状态的砷化镓微粒。

Study on recovering Ga from GaAs scraps by vacuum metallurgy;

真空法处理砷化镓废料回收镓的研究

A Quantitative Method of AB Microscopic Defects in Semi-insulating GaAs Single Crystals;

半绝缘砷化镓单晶中AB微缺陷的定量测量方法

Electron Acoustic Microscopic Study of GaAs Epitaxial Layers;

砷化镓半导体外延层的电子声成像

This paper describes the toxicity and harm of hydrogen arsenide.

介绍了砷化氢的毒性及危害性。

This method is to reduce all of As in poisonous materials to As~(3+)after destroying organism in materials, and then is to transform As~(3+) into arsine in a media of hydrochloric acid and using of boron hydride potassium as a reducing agent.

本方法是将中毒检材进行有机质的破坏,使检材中砷全部还原为三价砷,在盐酸介质中,以硼氢化钾作还原剂,将三价砷转化为砷化氢。

Then the arsenic was reduced into arsine by KBH 4.

石脑油中的微量砷用硫酸——过氧化氢萃取、消解 ,用硼氢化钾发生砷化氢 ,经净化除去其中的杂质 ,被硝酸银——聚乙烯醇——乙醇溶液吸收显色 ,在 41 0nm测定吸光度 。

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