A modified photo-induced open-circuit voltage decay method has been developed to measure the photo-generated minority carrier lifetime in HgCdTe photovoltaic detectors.
采用改进的光致开路电压衰退方法测量了不同组分Hg1-xCdxTe光伏探测器中光生少数载流子寿命。
On the basis of analysis on the diffusion of minority carrier and the equivalent circuit of the LAPS, the effects of various parameters on LAPS are deduced, and a basis for fabrication of high performance LAPS is set.
详细阐述了LAPS的基本构造 ,并通过分析LAPS的电路模型及少数载流子的影响得出了各种参数对LAPS的影响 ,从而为制造高性能的LAPS提供了理论基础。
The fundamental principle and calculation method to measure the minority carrier diffusion length,lifetime and bulk Fe content by surface photovoltage method were introduced.
介绍了用表面光电压(SPV)法测试少数载流子的扩散长度、少子寿命和体Fe含量的基本原理及其计算方法,分析了三种常见外延结构中少子扩散长度的测试方法及其影响因素,得出了用于表面光电压测试的外延片及衬底片应满足的条件。
The minority carrier lifetime ( τ ) in the base region of a solar cell is one of the most important parameters that affects the conversion efficiency of the device.
太阳电池基区的少数载流子寿命是影响电池效率的重要因素之一。
A new method of microwave reflectance applied in measurement for the minority carrier lifetime in HgCdTe is introduced.
介绍了用微波反射法测量HgCdTe中的少数载流子寿命 ,分析了其测量原理 ,并与接触式的光电导衰减法进行了对比。
Through measuring I-V character of solar cells, short circuit current and open circuit voltage and series resistant and shunt resistant could be gained, and then minority carrier lifetime and dark saturation current are calculated by the new method.
本文通过对测试少数载流子寿命的各种方法进行分析后提出了一种新的测量成品太阳电池基区少数载流子寿命的方法,这种方法通过分析太阳电池的Ⅰ-Ⅴ特性得到基区少数载流子寿命与太阳电池开路电压、短路电流的关系。
In this paper the minority carrier concentration is calculated analytically with the varying of the temperature T,Ge fraction x and doping concentration.
采用解析的方法计算了少数载流子浓度与Ge组分x、温度T以及掺杂浓度N的关系。
In this paper, the intrinsic carrier concentration, the minority carrier concentrationand the ratio of hole concentration to impurity concentration are calculated analyticallywith the varing of the temperature T, Ge fraction x and doping concentration.
本文在前人研究的基础上，利用解析方法研究了应变Si_(1-x)Ge_x层中本征载流子浓度、少数载流子浓度、p型杂质电离度与Ge组分x、温度T以及掺杂浓度N的关系。
Minority Carrier Lifetime of Silicon Solar Cell Research and Measurement;
硅太阳电池少数载流子寿命研究与测量
Pertaining to a semiconductor device in which both majority and minority carriers are present.
用于修饰或说明其中既有多数载流子又有少数载流子的半导体器件。
Standard test methods for minority carrier lifetime in bulk germanium and silicon silicon by measurement of photoconductivity decay
GB/T1553-1997硅和锗体内少数载流子寿命测定光电导衰减法
Effect of carrier diffusion on modulation transfer function of CCD
载流子扩散对CCD调制传递函数的影响
Majority Carrier- A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area.
多数载流子-一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。
MADE (Minimum Airborne Digital Equipment)
最少机载数字式仪表
The Operator Scheduling Strategy and Load Balancing Algorithms in Distributed Data Stream Processing;
分布式数据流处理的算子调度与负载平衡研究
Achieving Wavelength Conversion of EAM Model Based on the Change in the Number of the Carrier
基于载流子数目变化的EAM模型实现波长变换
A case with idiopathic spinal lipomatosis is commonly seen in the following situations: steroid treatment, endocrinopathy, and obesity.
文献记载中只有少数完全没有上述危险因子的病例。
The Study of the Children's Educational Problems of the Muslim Floating Population
穆斯林少数民族流动人口子女教育问题研究
carrier drift transistor
载流子漂移型晶体管
carrier storage delay time
载流子存储延迟时间
hot carriers in semiconductors
半导体中的热载流子
Evaluation of Hot Carrier Effect of SiGe HBT
SiGeHBT的热载流子效应评价
Apparatus the Semiconductor Hall Coefficient and Carrier Concentration at the Conditions of Different Temperatures
变温条件下半导体霍尔系数及载流子浓度的测量
Ampacity Ampacity is the safe current-carrying capacity of an electrical conductor in amperes as defined by code.
载流容量载流容量是以安培数来定义导线安全载流能力。
The mobility and the lifetime of minority carriers in polysilicon films are two key parameters of current gain increment.
多晶硅膜的少子迁移率和寿命是提高电流增益的两个关键参数.
Field Research of Northwest Minority Floating Population Family s Parent-Children Interaction Process;
西北少数民族流动人口家庭亲子互动过程的实地研究