The selection of quadrant photoelectric diode on laser guidance;
激光制导四象限光电二极管的选择
A novel, simple analytical procedure for determination of chromium(Ⅲ) in environmental samples with photoelectric diode detector is presented successfully, which is based on the fact that which is based on the principle that the system of luminol-H_2O_2-Cr(Ⅲ) can yield strong chemiluminescence The single analyzing time is less than 1 min.
根据Luminol H2O2 Cr(Ⅲ)体系在碱性条件下产生很强的化学发光的原理,用光电二极管作检测器测定环境样品中的Cr(Ⅲ)。
Based on the model of calibration,an adjusting method for the calibration of the sensor is designed by using the induction of photoelectric diode to light intensity to adjust,and using standard tool to calibrate.
综合考虑采用公式法,基于标定模型给出了一种标定调整方法,即利用光电二极管对光强的感应进行调整,借助于标准具进行标定。
A long wavelength photodiode for 10 Gbit/s applications;
基于10Gbit/s应用长波长光电二极管
Development of instrument to measure properties of weak light of photodiode;
光电二极管弱光光敏特性测试仪的开发
Temperature characteristics of Au/n-4H-SiC Schottky UV photodiode;
Au／4H-SiC肖特基UV光电二极管的温度特性
The Measurement of Dark Current Temperature Dependence of Photodiodes;
光电二极管暗电流温度特性的测量
The influence of thermal treatment on Si 1-x Ge x/Si multiple-quantum wells (MQW) p-i-n photodiodes has been investigated by photocurrent spectroscopy combined with X-ray double crystal diffraction.
利用光电流谱 ,结合 X射线双晶衍射研究了快速退火对 Si1 - x Gex/ Si多量子阱 p- i- n光电二极管的影响 。
15 /Si heterojunction pin mesa photodiodes are fabricated.
1 5 - (p)Si层 ,以此材料作为吸收区制备成GeSi/Si异质结 pin台面光电二极管。
The measurement results for Hg Cd Te photodiodes are presented.
文中列出了碲镉汞光电二极管结电容的测量结果.
Electro-optical characteristics of arsenic-doped base region long-wavelength HgCdTe n-on-p photodiode detector
砷掺杂基区n-on-p长波光伏碲镉汞探测器的光电特性
mercruy telluride-cadmium telluride detector
碲化汞-碲化镉探测器
optically optimal tellurium-cadmium-mercury infrared detector
光优型碲镉汞红外探测器
SPECTRAL STUDY ON RESPONSE OF HgCdTe IR TWO-COLOR DETECTOR ARRAYS
碲镉汞红外双色探测器响应光谱研究
Study of PV HgCdTe detector irriated by femtosecond pulse laser in infrared wave length
飞秒红外激光辐照PV型碲镉汞探测器实验研究
Study on the Microstructure of Hg1-xCdxTe Crystals by Scanning Electron Microscopy
碲镉汞晶体结构性质的电子显微术研究
Damage Mechanisms of Laser on PV-type Single Element HgCdTe Device and Visible-light CCD;
单元光伏型碲镉汞探测器及可见光CCD的激光损伤机理研究
NEGATIVE PHOTOVOLTAIC-RESPONSES IN HgCdTe INFRARED PHOTOVOLTAIC DETECTORS IRRADIATED WITH PICOSECOND PULSED LASER
皮秒脉冲激光照射下碲镉汞光伏红外探测器的负光伏响应新现象
Microstructures and Properties of Mercury Cadmium Telluride (HgCdTe) by Pulsed Laser Deposition (PLD)
脉冲激光沉积（PLD）碲镉汞（HgCdTe）薄膜材料结构特性的研究
Transient and permanent defects of HgCdTe photovoltaic detectors by γ irradiation
γ辐射对碲镉汞光伏探测器的暂态损伤与永久损伤
The microstructure of(Hg,Cd)Te crystal has been studied by analyticai EM.
用分析电子显微镜观察了碲镉汞晶体的显微结构。
The Theoretical Analysis and Testing of HgCdTe Loophole P-N Junction;
碲镉汞环孔P-N结理论分析与测试
LONG-WAVE INFRARED 2048-ELEMENTS LINEAR HgCdTe FOCAL PLANE ARRAY
长波红外2048元线列碲镉汞焦平面器件
variable-capacitance photodiode
可变电容光电二极管
Surface Treatment, Metal Electrode Contact and Indium Doping Behavior of Cd_(1-x)Zn_xTe Crystals;
碲锌镉晶体表面处理、金属电极接触特性及其In掺杂行为
The Study of the Micro Dewar for Long Linear HgCdTe IRFPA
长线列碲镉汞红外焦平面微型杜瓦的研究
Hydrogen Passivate HgCdTe: First-principle Study
红外碲镉汞材料氢钝化行为的第一性原理研究