Effects of the seed layer thicknesses on zero field resistivity and AMR in permalloy films with new seed layer NiFeNb;
种子层厚度对以NiFeNb为新种子层的坡莫合金薄膜的零场电阻率和AMR的影响
The zero field resistivity(ρ), ΔR/R and microstructures of samples are measured.
测量了样品的零场电阻率(ρ),磁电阻(ΔR/R)和微结构。