PHOTOLUMINESCENCE STUDY ON MBE LOW TEMPERATURE GROWN GaAs;
低温下分子束外延生长GaAs的光致发光研究
Studies of MBE-Grown ZnS_xSe_(1-x) Films for Liquid-Crystal-Light-Valve;
分子束外延生长液晶光阀用ZnS_xSe_(1-x)薄膜的研究
The Study of HgCdTe on Si by MBE;
Si基大面积碲镉汞分子束外延研究
Structure and properties of InGaP/GaAs epilayers grown by solid-source molecular beam epitaxy with a GaP decomposition source;
分解GaP源固态分子束外延生长InGaP/GaAs的结构和性能
Photoluminescence study of (GaAs_(1-x)Sb_x In_yGa_(1-y)As)GaAs bilayer quantum well grown by molecular beam epitaxy;
分子束外延生长的(GaAs_(1-x)Sb_x In_yGa_(1-y)As)GaAs量子阱光致发光谱研究
Study on ultrahigh carbon -doped p -t ype InGaAs grown by gas source molecular beam epitaxy;
气态源分子束外延生长重碳掺杂p型InGaAs研究
This paper describes the Molecular Beam Epitaxy(MBE)technology and its applications in large area homogeneous super thin epilayers growth.
本文阐述了分子束外延（ ＭＢＥ） 技术的特点以及在实现大面积均匀的超薄外延层生长中的应用。
The use of reflection high-energy electron diffraction(RHEED) has been proven to be a powerful tool to understand growth mechanisms of GaSb by molecular beam epitaxy(MBE).
采用分子束外延技术,在GaAs衬底上生长GaSb薄膜时,利用反射式高能电子衍射仪(RHEED)对衬底表面清洁状况、外延层厚度等进行在线监控。
In order to get better property quantum dots(QDs) with longer wavelength,better uniformity and higher luminous efficiency,three types of InAs/GaAs QDs were researched and fabricated on GaAs(100)substrates by molecular beam epitaxy(MBE)technology through the S-K strained self-assembled mode.
为了获得波长长、均匀性好和发光效率高的量子点,采用分子束外延(MBE)技术和S-K应变自组装模式,在GaAs(100)衬底上研究生长了三种InAs量子点。
The use of reflection high-energy electron diffraction (RHEED) intensity oscillations has proven to be a powerful tool to understand growth mechanisms of GaAs, AlAs and AlGaAs in molecular beam epitaxy (MBE).
采用分子束外延技术,在GaAs衬底上生长GaAs,AlAs和AlGaAs时,实现RHEED图像和RHEED强度振荡的实时监测已被证明是一种有效工具。
The designed 940 nm wavelength laser structure has been obtained by successful molecular beam epitaxy (MBE) growth w.
设计的激光器外延结构采用分子束外延 (MBE)方法生长 ,成功获得具有较低激射阈值的 94 0nm波长激光器外延片。
3μm InAs/GaAs quantum dots (QDs) laser Diodes have been grown by molecular beam epitaxy (MBE).
用分子束外延(MBE)生长了含应力缓冲层的InAs量子点激光器。
Preliminary Study on the Growth of AIN Thin Film by Molecular Beam Epitaxy;
分子束外延生长AIN薄膜的初步研究
Epitaxial Growth of AlInGaN Quaternary Alloys by RF-MBE
射频分子束外延生长AlInGaN四元合金
MBE Growth of InP Based PHEMT Epitaxial Materials;
分子束外延生长InP基赝配高电子迁移率晶体管外延材料
The InSb Epitaxial Growth on GaAs Substrate by Molecular Beam Epitaxy and Its Structure and Properties;
GaAs基InSb薄膜的分子束外延生长及其结构与性能
Effect of Reconstructures on Molecular Beam Epitaxial Growth of GaAs;
表面再构对GaAs分子束外延薄膜生长的影响
Structural Study of Molecular Beam Epitaxial Grown Gd_2O_3 and Nd_2O_3 High-k Nano-thick Film
分子束外延Gd_2O_3、Nd_2O_3高介电纳米薄膜的结构研究
Magnetic and electrical properties of Fe_3O_4 thin films on MgO(100) substrates by laser molecular beam epitaxy
Fe_3O_4/MgO(100)薄膜的激光分子束外延与磁电学性能
The Study on the Properties of CdTe Buffer Layer for MBE HgCdTe Epilayer
分子束外延HgCdTe薄膜的CdTe缓冲层特性研究
FABRICATION AND CRYSTALLINITY OF Bi_2Sr_2CaCu_2O_(8+δ)THIN FILMS BY MOLECULAR BEAM EPITAXY
Bi_2Sr_2CaCu_2O_(8+δ)薄膜的分子束外延法制备及结晶性
A Study of In Situ Annealing of MBE Growth Hg1-_xCd_xTe
分子束外延生长Hg1-_xCd_xTe材料原位退火研究
MBE GROWN ANTIMONIDE MID-INFRARED LASERS AND PHOTODETECTORS
用分子束外延制备红外锑化物激光器和探测器材料
Epitaxial and Physical Properties of ZnO-based Diluted Magnetic Semiconductors Grown by Molecular Beam Epitaxy;
ZnO基稀磁半导体单晶薄膜的分子束外延生长以及性能研究
Effects of Substrate Temperature and Growth Rate on Molecular Beam Epitaxial Growth of In_(0.2)Ga_(0.8)As
衬底温度和生长速率对In_(0.2)Ga_(0.8)As分子束外延薄膜生长影响
GSMBE Growth and Characterization of Fundamental and QCL Materials;
气态源分子束外延材料生长及特性和量子级联激光器材料生长研究
It stretches from the leaf base to the vascular ring in the stem axis.
它由叶子基部的维管束延伸至茎轴的维管束。
Analysis of Optical Constant in Near Infrared Region of TiO_2 Thin Film Deposited by Ion Beam Assisted Deposition
离子束辅助沉积TiO_2薄膜近红外光学特性分析
A projecting frame extending laterally beyond the main structure of a vehicle, an aircraft, or a machine to stabilize the structure or support an extending part.
悬臂支架为使结构稳固或支撑外延部分而从车辆、飞机或机器的侧面延伸至主体之外的架子
Ductility analysis of FRP-confined short rectangular reinforced concrete columns
FRP约束混凝土矩形短柱的延性分析