The resultsdemonstrat that three electron trape ( E _ c - 0.17 eV , E _ c - 0.23 eV, E _ c - 0.39 eV ) produced inp ￣ + nn ￣ + structures are characterized by deep level transient spectroscopy.
还可引入三个缺陷能级:氧空位E_ 1(E_ c - 0.17ev) 、 双空位E_2 ( E_ c-0.23eV ) 和E_3(E_c-0.39eV).
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