Homogeneous , strained epitaxial SiGe films on silicon substrates were used.
在硅基板上使用了均匀、应变的外延SiGe薄膜.
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Backwardness in high quality epitaxial wafer has limited greatly the development of Chinese LED industry.
高质量的外延片已经成为中国LED产业发展的主要制约环节.
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Impurity doped during epitaxy will diffuse in the epitaxial layer and even into the substrate.
在半导体器件制造的外延工艺中,外延生长时通常要掺入杂质.
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Single wafer silicon epitaxial CVD equipment has very good thickness a nd resistivity uniformity.
使用单片式外延炉生产的硅外延材料具有良好的厚度和电阻率均匀性.
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It is shown that the epitaxial layers have flat interface of heterojunctions and good crystal quality.
结果表明外延层具有平坦的异质结界面和良好的晶体特性.
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The four - probe method is used on very thin samples such as epitaxial wafers and conductive coatings.
四探针法用在非常薄的样品,例如外延晶圆片和导电涂层上.
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There are three procedures in LED production, namely epitaxial wafer, tube core and encapsulation.
在LED生产过程中, 主要有外延片生长 、 芯片和封装三个环节.
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And a brief description of the development of epitaxial The number of shape Combination.
并简单描述数形结合发展的外延.
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Epitaxial layers of InSb and InAs _ xSb _ ( 1 - x ) on ( 111 ) InSb and ( 100 ) GaAs substrate have been grown by MBE technique.
在 ( 111 ) InSb和 ( 100 ) GaAs衬底上,用分子束外延技术生长了InSb和InAs_xSb_ ( 1-x ) 外延层.
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