Measuring the ion density of pulsed vacuum arc source;
脉冲真空放电离子密度的测量
Aim To investigate the influence of ion density( n i) on the deposition of wurtzite GaN films on the substrate of α Al 2O 3(0001) by electron cyclotron resonance plasma.
目的 研究在电子回旋共振等离子体辅助法生长ＧａＮ 时的离子密度对其质量的影响。
The ion density, flux, dose distributions are calculated by solving Poisson s equation and the equations of ion motion and continuity us.
通过计算得到了鞘层内随时间变化的电势分布和离子密度分布 ,计算了端点附近材料表面处的离子流密度分布和注入剂量分布随时间的变化规律 。