By using real-place recursion method,Fermi level and total bond order integral between Cu and another neighbor elements Y,La and Zr on the crystalline phases were calculated.
通过计算机编程建立Zr2Cu晶体相中以Cu原子为中心的原子团簇模拟Zr基非晶中二十面体原子团簇模型,应用实空间的递推方法计算了Zr2Cu晶体相中的费米能级及团簇中Cu与近邻合金元素Y、La、Zr的键级积分。
It is found that the Ag particles with sharper edges and wider terrace between steps have more electrons at Fermi level.
分析了Ag颗粒的形貌对其费米能级的影响。
The orbital binding energy and Fermi level of individual element of amorphous and crys- tallized Zr_(55)Cu_(30)Al_(10)Ni_5 alloys were measured by XPS.
测定了大块非晶合金 Zr_(55)Cu_(30)Al_(10)Ni_5晶化前后的费米能级和各元素的电子结合能,研究了非晶合金的电子结构特征和电击穿行为。
According to the condition of elctroneutrality, formulae of Fermi energy are deduced associated with computation results of electron and void concentration ,when donor and acceptor exist at the same time.
利用电中性条件,结合电子和空穴浓度计算式,推导出了当施主和受主同时存在时,费米能级的计算式,并且根据实际应用条件作了讨论,推导了各种条件下的费米能级计算公式。
A new graphic method is described for calculating the Fermi energy, the free electron and free hole concentrations, and the ionized impurity concentrations in semiconductors material with the drawing function of Matlab software.
介绍了一种新的利用Matlab软件绘图功能的图解法计算费米能级以及载流子浓度的方法 ,这种方法舍弃了传统的繁琐的数值计算及计算机编程 ,具有简单、方便、直观等特点 。
According to the condition of electroneutrality, a general formula of Fermi energy in one-doped semiconductor is deduced.
利用电中性条件，导出了掺单一杂质半导体费米能级的普适公式，在具体应用时可作相应简
The Fermi energy level of electron in metal can be measured.
高校中不少实验室具有半导体探头能谱仪，可扩展用作正电子湮没多普勒增宽谱仪，并测量金属中电子的费米能
For the grain-boundary potential bather model with acceptor defect layers on grain surface, the spatal variation of the steady-state quasi-Fermi level near grain boundary is calculated in the diffusion limit For an n-type polystalline semiconductor,most of the variation occurs in the near grain boundary region on the revere-biased side.
本文由受主缺陷扩散层模型详细计算了扩散极限下晶界附近的准费米能级的空间变化。
Formulae of Fermi Energy in Poly-doped Semiconductor and Algorithm Computation
混合杂质半导体费米能级公式及数值计算
The electrons that participate in the conduction process are termed free electrons, which have energies greater than the Fermi energy.
参与导电过程的电子，我们称之为自由电子，其能量高于费米能级。
Average-Bond-Energy and Fermi Level on Metal-Semiconductor Contacts
金属-半导体超晶格中的金属费米能级和半导体平均键能
THE MEASUREMENT OF FERMI ENERGY LEVEL OF ELECTRON IN METAL BY POSITRON ANNIHILATION DOPPLER BROADENING SPECTROMETER
用正电子湮没多普勒增宽谱测量金属中电子的费米能级
Numerical Calculation of the Fermi Energy in Single-Doped and Co-doped Semiconductors
单掺杂及混合掺杂半导体费米能级随温度变化的数值计算
The amendment of ±5kT energy level width for thermodynamic properties of Fermi surface system
费米面系统热力学性质的±5kT能级宽度修正
enrico fermi atomic power plant
讹科费米原子能电站
Influence of Grain Size on the Fermi Energy and Fermi Velocity of Nanocrystalline Zirconium
纳米结构锆晶粒尺寸对费米能及费米速度的影响
Fermion condensate and Dirac operator determinant with external gauge fields and dynamical fermion self energy
含外规范场和动力学费米子自能的狄拉克算符及费米子凝聚
THE PERFORMANCE ANALYSIS OF A BRAYTON REFRIGERATION CYCLE WORKING WITH A FERMI GAS
费米气体布雷顿制冷循环的性能分析
Inner Cladding Fiber Doped with Nano InP and Its Amplification;
纳米级InP内包层光纤及其放大性能
The Electronic Energy Levels of the Nanostructure InAs/GaAs Quantum Ring;
纳米结构铟砷/镓砷量子环电子的能级
Study on the Secondary Gap of the π Electrons of Single Wall Carbon Nanotubes
单壁碳纳米管π电子次级能隙的研究
Study on Properties and Structures of the Nanoscale MoS_2-based Coatings
纳米级MoS_2基涂层性能及结构的研究
Preparation,characterization and performances of submicron ε-CL-20
亚微米级ε型CL-20的制备、表征与性能
The powers cost to manifest. Talents (0-level powers) cost 1 power point to manifest after a character uses up her allotted free manifestations per day.
展现该异能的费用。天赋异能(零级异能)在每日免费显能次数被用光后每次耗费1点灵能点。
Six foot one, two hundred and twenty pounds, Fisher was built like a heavyweight boxer.
身高1米86，体重100公斤，费蛇耳生的象个重量级拳王。
ZERO ENERGY FERMION IN TOPOLOGICAL NONTRIVIAL SPHERICAL SYMMETRICAL FIELD ON MINKOWSKI SPACE
闵空间拓扑非平庸球对称场中零能费米子