With the X-ray diffraction method analysis,one sample was found as a pure multi crystal graphite.
用X射线衍射法分析发现1种样品是纯的多晶石墨,它们的微晶结构参数La值平均为29。
Purification and stoichiometric concentration control of ZnSe polycrystalline by zone sublimation method;
ZnSe多晶料的提纯与化学比的控制
Research on preparation and structure of porous B-doped polycrystalline diamond;
多孔含硼金刚石多晶体的制备与结构研究
Growth and Characterization of Polycrystalline HgI_2 Films on Amorphous-Si Film Substrate;
非晶硅薄膜上碘化汞多晶薄膜的生长及其性能
Study of Preparation of Polycrystalline Material of La_(0.5)Sr_(0.5)CoO_3;
La_(0.5)Sr_(0.5)CoO_3多晶靶材制备工艺的研究
Growth of Polycrystalline GaN on Silica Substrate via Ga Nitridation;
采用金属镓层氮化技术在石英衬底上生长多晶GaN
Large grain-sized polycrystalline silicon film obtained by SPC of a-Si: H film deposited by PCVD;
a-Si:H薄膜固相晶化法制备大晶粒多晶硅薄膜
Status and development of photovoltaic industry and producing technology of polycrystalline silicon;
光伏产业和多晶硅技术现状与发展
ESD protection devices on polycrystalline silicon;
ESD保护器件在多晶硅上的实现
Phosphorous gettering of cast multicrystalline silicon wafers from different positions of the ingot;
铸造多晶硅硅片的磷吸杂研究
on electrical properties of multicrystalline silicon prepared by metallurgic method was investigated.
利用四探针电阻测试仪、光学显微镜、扫描电镜、电感耦合等离子发射光谱仪、能谱分析等设备,从晶粒尺寸、组织形态以及晶界析出物等对冶金法制备的多晶硅电阻率的影响。
It is described that a series research of heavy phosphorous diffusion gettering, aluminum and combination of aluminum and phosphorous gettering (evaporation of aluminum on the back of the wafers) are used to fabricate multicrystalline silicon solar cells with different impurity concentration of interstitial oxygen.
对不同氧含量的太阳电池用多晶硅片进行了磷扩散吸杂,铝吸杂及磷铝联合吸杂的研究,用准稳态光电导衰减法(QSSPCD)和太阳电池效率测试系统测试了吸杂前后多晶硅片的少子寿命和IV曲线。