Study of Parameters of Neutron-Irradiated Single Crystal Silicon;
中子辐照的单晶硅参数研究
Study on Partial Cone Cracks in Nano-grinding of Single Crystal Silicon;
单晶硅纳米磨削过程的摩擦裂纹试验研究
Study on establishing and testing for ultra-precision machining single crystal silicon surface roughness of prediction model
单晶硅超精密切削加工表面粗糙度预测模型的建立及试验研究
Determination of Trace Germanium in Monocrystalline Silicon by ICP-AES;
等离子体发射光谱法测定单晶硅中微量锗
Comparison of specific yield of solar cell assemblies madefrom amorphous silicon and monocrystalline silicon;
非、单晶硅太阳能电池组件比功率发电量比较
The measurement temperature of monocrystalline silicon with Raman spectrum;
单晶硅片温度的拉曼光谱测定
The micro-tribological and nano-mechanic properties of Ar~+ implanted single-crystal silicon were investigated by using a Micro-tribology Text and a Nano Indenter System, The results show that Ar~+ implantation of single-crystal silicon had increased the wear-resistance, the best dose is 1×10~(16) ions /cm~2.
利用离子注入技术对单晶硅表面进行了氩离子注入,用微摩擦磨损实验机研究了改性层的摩擦磨损行为,并用透射电子显微镜研究了改性层的微观结构。
In Chemical-Mechanical polishing experiments we produced optical quality super smooth surfaces on single-crystal silicon, but cannot insure the surface figure.
使用机械 -化学抛光法加工大尺寸单晶硅可获超光滑表面 ,但很难保证良好的面型。
The nano-scratch behaviors of Ar+ implanted single-crystal silicon were investigated by a nano indenter system, the micro-structure of the implanted layer was analyzed with TEM.
通过离子注入技术对单晶硅表面进行氩离子注入处理,利用纳米压痕仪及其附件研究了单晶硅表面在离子注入前,后的微观力学性能和变形机理,并用透射电子显微镜研究了改性层的微观结构。
Molecular dynamics simulation in monocrystal silicon indentation;
单晶硅纳米级压痕过程分子动力学仿真
A molecular dynamics(MD) simulation is carried out to analyze the effect of cutting edge radius,cut-depth,and grinding speed on the depth of subsurface damage layers in monocrystal silicon grinding processes on an atomic scale.
应用分子动力学仿真研究了原子量级条件下磨粒钝圆半径、磨削深度和磨削速度对单晶硅磨削后亚表面损伤层深度的影响。
The authors carry out respective researches on the making of electrode,installation of experiment,choice of electrolyte for electrolysis hydrogenadulterated of p-type monocrystal silicon,and the distribution of shallow impurity consentyation of p-type moncrystal silicon of electyolysed.
分别对 P 型单晶硅电解掺氢的电极制作、实验装置、电解液的选择、电解后浅杂质浓度的分布等进行了研究。
Experimental Research on Cutting of Silicon and Ceramic with Fixed Diamond Endless Wire Saw;
环形固结金刚石线锯切割单晶硅与陶瓷的实验研究
Study on the AFM-based micro-machined silicon surface;
基于AFM微加工的单晶硅表层性质的研究
Research on Wet Anisotropic Etching of Silicon in MEMS;
MEMS中单晶硅的湿法异向腐蚀特性的研究
Research of Nc-Si/c-Si Heterojunction MOSFETs Pressure-magnetic Mutli-sensor;
纳米硅/单晶硅异质结MOSFETs压/磁多功能传感器研究
Anisotropic Etching Simulation of Crystalline Silicon Based on Crystal Lattice
基于晶格结构的单晶硅异向腐蚀的计算机模拟
General specification of single silicon solar cells
GB/T12632-1990单晶硅太阳电池总规范
We made the Czochralski silicon single crystal with a diameter of 12 inches.
直径12英寸直拉单晶硅研制成功。
neutron transmutation doping of monocrystalline silicon
单晶硅中子嬗变掺杂技术
Application of Nitrogen-doped Czochralski Silicon in Solar Cell;
掺氮直拉单晶硅在太阳电池中的应用
A Simulant Experiment Study of the Silicon s Mechanism in the CMP;
单晶硅片CMP磨损机理的模拟试验研究
The Effect of High-Energy Particles Irradiation in Monocrystalline Silicon
高能粒子辐照单晶硅辐照效应的研究
Matlab-Simulating of the Transmitted Lauegrams of Monocrystalline Silicon
单晶硅透射劳厄相图的Matlab模拟
Material removal characteristic of silicon wafers in chemical mechanical polishing
单晶硅片化学机械抛光材料去除特性
Studies of Indium Tin Oxide Thin Films on High Efficiency HIT Solar Cells;
高效HIT非晶硅/单晶硅太阳电池中透明导电膜的研究
Band Structure and Transport Mechanism of Hydrogenated Nanocrystalline Silicon/Crystalline Silicon Heterojunction Diode;
氢化纳米硅/单晶硅异质结二极管的能带结构和输运特性研究
The Research of Power Quality by Improve the Wafer Efficiency of the Monocrystalline Silicon Solar Cell
单晶硅太阳能电池硅片转换效率提高对并网电能质量的改善
Selection of the Resistivity of Silion Monocvystalline of High-temperature Silion Power Devices;
高温硅功率器件所用硅单晶电阻率的选取
Oxidation Behaviors of Poly- and Single Crystalline Transition-Metal Disilicides;
过渡族金属二硅化物单晶和多晶的氧化
Study on the Release Rate of Latent Heat in Solar Grade Czochralski Silicon Growth;
太阳能硅单晶快速生长中结晶潜热的研究
The Czochralski silicon monocrystalline polished wafer with a diameter of eight inches
8英寸直拉硅单晶抛光片
Monocrystalline silicon ascut slices and lapped slices
GB/T12965-1996硅单晶切割片和研磨片