Now, CMP has been regarded as the unique technology to meet the need of global planarization.
随着集成电路工业的发展，芯片集成度不断提高，特征尺寸不断减小，为了改善芯片电学性质，需要采用多层金属布线结构，导致芯片表面要求达到全局平面化，而传统的抛光工艺已不能满足这一要求，现在CMP工艺已被人们认为是唯一可实现全局平面化的工艺。
After four kinds of planar methods are compared,as unique global planarization method,the development,application and prospects of chemical mechanical polishing are .
在比较了IC工艺中的四种平坦化技术基础上,重点综述了唯一可以实现全局平坦化的化学机械抛光(CMP)方法的发展、应用及展望。
This algorithm uses the local flatness of surface, searches the local reconstruction for every point from the 3D Delaunay triangulation, and from the union of such locale reconstruction, carries out corresponding manifolds by deleting incompatible triangles.
提出了一种基于曲面局平特性的,以散乱点集及其密度指标作为输入,以三角形分片线性曲面作为输出的拓扑重建算法。
The principle and techniques about CMP for tungsten plug in ULSI were studied.
对目前超大规模集成电路钨插塞化学机械全局平面化(CMP)的原理及工艺进行了分析,对钨抛光浆料的组成成分进行了研究,开发了一种能够适合工业生产的钨的碱性抛光浆料,并对钨抛光浆料今后的发展进行了展望。