electron-beam hardening

基本解释电子束淬火

网络释义

1)electron-beam hardening,电子束淬火2)electronic,电子3)electron,电子4)electrons,电子5)electronics,电子6)electron-antielectron collision,电子-正电子碰撞

用法和例句

Development of an electronic optometer based on SCM;

单片机电子视力计的研制

Clinical analysis on liposuction adopting electronic liposuction machine;

医用电子去脂机行抽脂术临床效果分析

Research on the development of automobile electronic information industry ——based on the theory of industry growth;

基于产业成长理论的中国汽车电子信息产业发展研究

Mixed proton-electron conductors for hydrogen permeation;

质子-电子混合导体透氢膜

Study of ion catch technology of electron microscopy in virus detection of patient s excrement;

离子扑捉电子显微镜技术检测患者粪便中病毒的方法

Teaching research on electric and electron speciality oriented art recruiting students;

面向文科招生的电气、电子专业教学研究

A comparison of ionizing radiation damage in CMOS devices from ~(60)Co Gamma rays,electrons and protons;

CMOS器件~(60)Coγ射线、电子和质子电离辐射损伤比较

In order to study avalanche ionization mechanism, it is inevitable to deal with rates of electrons absorbing and losing energy.

研究雪崩破坏机理,必然涉及到电子吸收激光能量的速率和电子损耗能量的速率,这些都与电子和声子的散射有密切的联系。

N-channel MOS transistors from CC4007,CC4011 and LC54HC04RH device were irradiated with different dose rate Co-60 gamma rays,lower energy protons(less then 9MeV)and 1MeV electrons.

利用不同剂量率γ射线、低能 (小于 9MeV)质子和 1MeV电子对CC40 0 7RH、CC40 11、LC5 4HC0 4RHNMOS FET进行了辐照实验 ,结果表明 ,在 +5V偏置条件下 ,9MeV以下质子造成的损伤总是小于60 Co,而且质子能量越低 ,损伤越小 ;对于同等的吸收剂量 ,1MeV电子和60 Co造成的损伤差别不大 ;在高剂量率γ射线辐射下 ,氧化物陷阱电荷是导致器件失效的主要原因 ,在接近空间低剂量率辐射环境下 ,LC5 4HC0 4RH电路失效的主要原因是辐射感生界面态陷阱电荷 ,而CC40 0 7RH器件则是氧化物陷阱电荷 。

Through introducing the TCA substitute technical and solvent in mental,electronics and precision cleaning industry,summing up some of the characteristics of alternative solvents,this article introduces some examples of alternative technologies on the process characteristics and its application,while for domestic enterprises to implement TCA offers eliminated the choice of alternative principles.

通过介绍金属清洗、电子清洗和精密清洗领域的α-三氯乙烷(TCA)替代溶剂及其相关替代的技术,总结了部分替代溶剂的特点,并以实例介绍了部分替代技术的工艺特点及其应用,同时为国内相关企业实施TCA淘汰提供了TCA替代品的选择原则。

This article summarizes the development trend and direction of the traffic electronics.

概括介绍了交通电子的发展动向及未来趋势。

At the base of studying cultivating model of the same talents in other countries,we raised the construction and imagination of the practice teaching system of electronics of our higher vocational school.

为了实现从制造业大国向制造业强国的转变,中国急需大量的高级技能型人才,通过对国外同类人才的培养模式的研究,初步提出了我国高等职业学校电子专业实践教学体系的构建与设想。

We calculate its radialization correction and make the correlative discussion,obtain the cross section of electron-antielectron collision under chain approximation,and compare the tree-level cross section with the cross section under chain approximation.

对其辐射修正作了相关的计算和讨论,从而得到了电子-正电子碰撞在链近似下的散射截面,并与最低阶的散射截面作了比较。

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